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 RB751SL — Schottky Barrier Diodes ? 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com RB751SL Rev. A1 1 October 2010 RB751SL Schottky Barrier Diodes Features ? Low Forward Voltage Drop ? Fast switching ? Very Small and Thin SMD package ? Profile height, 0.43mm max ? Footprint, 1.0 x 0.6mm Absolute Maximum Ratings * TA = 25 °C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Minimum land pad. Electrical Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 30 mA IFSM Forward Surge Current (8.3mS Single Half Sine-Wave) 200 mA PD Power Dissipation 227 mW TJ, TSTG Operating Junction & Storage Temperature Range -55 to +150 °C Symbol Parameter Value Unit RθJA Thermal Resistance, Junction to Ambient * 550 °C/W Symbol Parameter Test Conditions Min. Max. Unit VR Breakdown Voltage IR = 10 μA30 V VF Forward Voltage IF = 1mA 370 mV IR Reverse Leakage VR = 30V 0.5 μA trr Reverse Recovery Time IF = I R= 10mA, irr = 0.1IR 8.0 nS Cj Junction Capacitance VR = 1V, f = 1.0MHz 2.5 pF Connection Diagram 2 1 2 1 SOD-923F Marking: AD |